METHOD FOR FABRICATING 3-DIMENSIONAL CELL IN NON-VOLATILE RANDOM ACCESS MEMORY

摘要

A method for manufacturing a three dimensional cell of a nonvolatile random access memory is provided to minimize a crystal defect of an epitaxial layer by forming a second substrate through a solid phase epitaxy method. A first string with a source contact(23) penetrating an interlayer insulating film(24) is formed on a first substrate. A contact hole is formed by etching the interlayer insulating film. A drain contact is formed to bury the contact hole by a selective epitaxial growth method. A second substrate is formed to cover the interlayer insulating film by the solid epitaxy method. A second string with a source contact is formed on the second substrate. The selective epitaxial growth method and the solid epitaxial method are performed by in-situ.