| 摘要 |
A method for forming a semiconductor device is provided to improve reliability of a process and a yield of the semiconductor device without a lifting phenomenon of a support layer by removing the support layer by forming a photoresist pattern. A bottom electrode(165) is formed in a bottom electrode in a cell region of a semiconductor substrate(100). A main vernier is formed in a scribe lane region. A support layer pattern is formed in the cell region of the upper part of a sacrificial layer(170). A sub vernier is formed in the scribe lane region. A photoresist pattern is formed in the overall surface to open the scribe lane region. The sacrificial insulating layer is exposed by etching the sub vernier and the support layer of the scribe lane region.
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