METHOD FOR MANUFACTURING OF LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR

摘要

A method for manufacturing a LDMOS(Lateral Double diffused Metal Oxide Semiconductor) is provided to improve a breakdown voltage by lowering an electric field of a gate edge by designing high on resistance characteristic. A buffer oxide layer(130) is formed in an upper part of a semiconductor substrate(110). A first conductive semiconductor region is formed by implanting a first conductive impurity ion on the buffer oxide layer. A second conductive body region with a contact surface with the first conductive semiconductor region is formed on a part of the semiconductor substrate by implanting the second conductive impurity ion. The low density second conductive region is formed in a curved surface of the second conductive body region by implanting the low density second conductive impurity ion. The first conductive region is formed on the low density second region by implanting the first conductive impurity ion.