| 摘要 |
A method for forming a semiconductor device is provided to prevent collapse due to the tension between patterns by forming a pillar pattern overlapped in an X direction and a Y direction after forming a dual pattern of a first hard mask layer of the X direction and a second hard mask layer of the Y direction. A layer to be etched, a first hard mask layer and a second hard mask layer are formed in the upper part of a semiconductor layer. A first photoresist pattern of a line/space shape of an X direction is formed in the upper part of the second hard mask layer. The first hard mask layer is exposed by etching the second hard mask layer by using the first photoresist pattern as an etch mask. The first photoresist pattern is removed. A second photoresist pattern which is vertical to the X direction and has a line/space shape of the Y direction is formed in the upper part of the second hard mask layer. The layer to be etched is exposed by etching the first hard mask layer and the second hard mask layer as the etch mask. The first hard mask layer and the second hard mask layer are etched to the etching mask and the etched layer is the second photosensitive pattern exposed. The second photoresist pattern is removed.
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