| 摘要 |
A phase-change memory device and fabrication a method thereof are provided to improve product yield by forming lower contact as a protrusion type. In a phase-change memory device and fabrication a method thereof, a double structure insulating layer is formed on the semiconductor substrate in which a base structure is molded. The double structure insulating layer at a place for a lower electrode contact is removed and the semiconductor board is exposed. A conductive layer(115) and a packed layer(117) are formed on a whole structure and the lower electrode contact is formed with a protrusion type.
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