| 摘要 |
A semiconductor device and manufacturing method thereof is provided to minimize a change of thermal stress caused by a sintering progress by forming an impure anti-reflective coating in depositing a metal layer. The semiconductor device comprises an interlayer dielectric layer, and a metal layer(220) and a pure impure anti-reflective coating(230). The interlayer dielectric layer is formed on the substrate. The metal layer is formed on the interlayer dielectric layer. The impure anti-reflective coating is formed on the metal layer. The impure anti-reflective coating is the impure TiNx film. The impure anti-reflective coating has the thickness of 300Å~375Å. |
