| 摘要 |
A semiconductor memory device is provided to secure a high speed operation by minimizing loading of data passing through a global input/output line. A semiconductor memory device includes a plurality of banks(BANK0~BANK3) and a plurality of global input/output lines(GIO-04,GIO-15,GIO-26,GIO-37). Each bank includes a plurality of memory blocks(U0~U7,D0~D7). A plurality of memory blocks is divided into a plurality of memory block groups. A plurality of memory blocks included in each memory block group is adjacent into a column direction. A plurality of memory blocks included in each memory block group shares a column selection signal. A plurality of global input/output lines is connected to a plurality of memory block groups. The global input/output line transmits data of a plurality of memory blocks included in each memory block group through a time division mode.
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