CRUCIBLE FOR MANUFACTURING SILICON SINGLE CRYSTAL INGOT AND APPARATUS OF MANUFACTURING SILICON SINGLE CRYSTAL INGOT HAVING THE SAME

摘要

A crucible for manufacturing a silicon single crystal ingot and an apparatus of manufacturing the silicon single crystal ingot having the same are provided to improve production yield of the silicon single crystal ingot by preventing a silicon single crystal ingot from being settled on a quartz crucible and a graphite crucible unstably. A crucible(120) for the silicon single crystal ingot is comprised of a quartz crucible(130) and a graphite crucible(140) accommodating the silicon solution for growing the silicon single crystal ingot. A quartz crucible is composed of an internal layer(131) consisting of the synthetic silica and of an outer layer(132) made of the natural silica while circling around the internal layer. The graphite crucible is made of the graphite material while surrounding the outer side surface of the quartz crucible.