| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent coupling capacitance by supplying a step between the main word line and a pre decoding signal line. An inter-layer insulating film(42) is formed on the semiconductor substrate(10) of a cell region, and a plurality of trenches(44) is formed with being separated with each other by etching the interlayer insulating film selectively. A first and a second metal wiring(46a, 46b) are formed on interlayer insulating layer inside a plurality of trenches and between the plural trenches. A second metal wiring comprises the main word line(MWL0,MWL3) and the pre-decoding signal line(PX0).
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