| 摘要 |
A method of fabricating a dual gate in a semiconductor device is provided to prevent line width of the gate conductive film pattern by forming a gate stack while setting the line width of the gate conductive film pattern in advance. A recess trench is formed within a semiconductor substrate(300) of a cell region in semiconductor substrate defining the cell region and a peripheral circuit region. A gate insulating film and a second conductive pattern are formed at the peripheral circuit region while forming a gate insulating film(400) and the first conductive pattern(360a) overlapping with the trench. The insulating layer pattern fixing the line width of a first and a second conductive layer pattern is formed, and the photoresist layer pattern exposing a certain region of the peripheral circuit region and cell region is molded.
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