| 摘要 |
A method of fabrication an image sensor is provided to prevent crosstalk through color overlay measurement by overlapping successively a color filter on an overlay box pattern. The passivation layer is formed on a semiconductor substrate having a lower structure. One overlay among the first color filter is ovelayed with an upper metal on the passivation layer. The second color filter or the third color filter overlay box pattern is formed on the first color filter. Therefore, the overlay between each color filter is confirmed. The first color filter is coated on the formed M3 overlay box in the overlay box pattern and cut the color on the overlay box patterned on the mask.
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