| 摘要 |
<p>A method for forming a pattern of a semiconductor device is provided to improve overlay and critical dimension uniformity between patterns by using an oxide film spacer layer as an etch barrier. A hard mask layer, a first polysilicon layer, a first photoresist pattern are molded on the semiconductor substrate including a micro-pattern reserved area. A first mask pattern is formed by etching a first polysilicon layer by using a first photoresist pattern as a mask, and a spacer layer(340) is formed on the whole surface including the first mask pattern by certain thickness. A second polysilicon layer(350) is formed on the whole upper unit including the first mask pattern. A planarization process is performed until the spacer layer is exposed.</p> |
