| 摘要 |
An image sensor production method is provided to implement the high Q-factor inductor by using the method for the substrate noise isolation. A shallow trench isolation oxide layer is formed on a semiconductor substrate. The gate control region is formed on an upper part of substrate and the shallow trench isolation oxide layer. A BPSG(Borophospho Silicate Glass) layer and the first oxide layer are successively formed on the top of the substrate. A FSG layer and the second oxide layer are successively formed on the first oxide layer and a plurality of barrier metals are formed. The single pattern ground shielding is formed on the substrate using the pattern. The double ground shielding pattern is formed by one among pattern except for the formed pattern.
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