| 摘要 |
A method for measuring an amount of particle is provided to accurately measure an amount of particle generated from the semiconductor process using metal and silicon as the standard particle. A standard particle(200) is evaporated on a calibration wafer(100). The calibration wafer is classified into the unit area. The laser is irradiated by a laser light generating apparatus(310) to the unit area. Some of laser is scattered by the standard particle arranged in the unit area, and the other is reflected and is income in a detector(320). The intensity of the laser scattered by the detector is measured.
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