| 摘要 |
An image sensor and a manufacturing method thereof are provided to improve photosensitivity by extending the depletion region of photodiode. The second conductive diffusion layer(120) is formed on the first conductive substrate(100). An element isolation layer(140) is formed inside the second conductive diffusion layer so that the second conductive diffusion layer is separated. A gate(170) is formed on the second conductive diffusion layer. The first conductive region(190) is formed on the surface of second conductive diffusion layer in order to be arranged at the one side of gate. The first conductive well region(200) is formed inside the second conductive diffusion layer at the other side of gate. A floating diffusion region(210) is formed inside the first conductive well region in order to be arranged at the other side of the gate.
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