| 摘要 |
A method for manufacturing a semiconductor device is provided to suppress a defect of a device by removing a flake foreign material inputted to the wafer by completely removing a conductive layer used as a filling layer of a capacitor. An etch stopping layer(102) and an insulating layer are successively stacked on a semiconductor substrate. A storage hole is formed by etching the insulating layer. A conductive layer(105) and a capping layer(106) are formed on the whole structure including a storage hole. A bevel etching process is performed by using Cl2. The capping layer, the conductive layer, the insulating layer and the etch stopping layer on the bevel region of the semiconductor substrate are removed. The etch stopping layer is made of the nitride layer. The insulating layer is made of a dual layer of a PSG layer and a PETEOS layer.
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