| 摘要 |
A fabrication method for a semiconductor device is provided to improve a semiconductor property by loading a semiconductor substrate on the surface of DI water vertically. A first pad oxidation layer(202), a pad nitride layer(204), a second pad oxide film are laminated on a semiconductor substrate and are patterned to form a first trench. An oxide film spacer is formed inside the first trench by forming an oxide film for a spacer on the semiconductor substrate and etching backing it. The other of the pad nitride layer, the first pad oxide film, a part of the semiconductor are etched along the oxide film spacer. A recess of the first pad oxidation layer and a recess of the pad nitride layer are performed in order.
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