MONITORING PATTERN OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING OF THE SAME

摘要

A monitoring pattern of semiconductor device and method for fabricating of the same are provided to implement the monitoring pattern in various regions by connecting a gate electrode and an LDD region with a single or a chain type. The gate electrode(12) is formed on a semiconductor substrate(10). A spacer is formed in one side wall of the gate electrode. The LCD area(14) is formed in the surface of semiconductor substrate. The salicide(20) is formed in the front side of the semiconductor substrate except for the region of spacer. The interlayer insulating film is formed on the semiconductor substrate. The interlayer insulating film on salicide is penetrated by a contact(24). The metal wiring(26) connected to the contact is formed on the interlayer insulating film.