| 摘要 |
A method for predicting a drain current in an MOS transistor is provided to estimate a drain current property according to a drain voltage by modeling a breakdown effect and extracting a drain current. It is determined whether the size of a drain voltage is larger than a predetermined breakdown voltage or not. If the size of the drain voltage is below the breakdown voltage, drain breakdown voltage is set 1 X e^15 A, and if the size of the drain voltage is over the breakdown voltage, a breakdown current is set the n square of the difference of the breakdown voltage and the drain voltage. A calculated drain breakdown current is added to a calculated drain current from a modeling based on BIMS3.
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