发明名称 Semiconductor device having filler with thermal conductive particles
摘要 A semiconductor device that includes an insulating substrate having an upper conductor formed on an upper surface thereof and a lower conductor formed on a lower surface of the insulating substrate. The device also includes a semiconductor element mounted on the upper surface of the insulating substrate with an under-element solder therebetween. The device further includes a heat sink whereon the insulating substrate is mounted with an under-substrate solder therebetween. The device additionally includes a silicone gel covering the semiconductor element, the under-element solder, and the upper conductor. In addition, the device includes a filler covering the lower conductor and the under-substrate solder, without covering the semiconductor element, the under-element solder, and the upper conductor, and having a thermal conductivity larger than a thermal conductivity of air and a fluidity higher than a fluidity of the silicone gel.
申请公布号 US7554192(B2) 申请公布日期 2009.06.30
申请号 US20060553235 申请日期 2006.10.26
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 KOGA MASUO;MIZOSHIRI TETSUO;HAYASHIDA YUKIMASA
分类号 H01L23/34 主分类号 H01L23/34
代理机构 代理人
主权项
地址