| 摘要 |
A method of manufacturing a non-volatile memory device includes the steps of forming gates respectively having a structure in which a gate insulating layer, a first conductive layer, a dielectric layer, a second conductive layer and a metal-silicide layer are laminated over a semiconductor substrate, annealing the metal-silicide layer at a temperature, which is the same as or lower than an annealing temperature of the dielectric layer, forming a buffer oxide layer on the entire surface, and forming a nitride layer on the buffer oxide layer.
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