发明名称 Multi-purpose non-volatile memory card
摘要 A flash non-volatile memory system that normally operates its memory cells in multiple storage states is provided with the ability to operate some selected or all of its memory cell blocks in two states instead. The two states are selected to be the furthest separated of the multiple states, thereby providing an increased margin during two state operation. This allows faster programming and a longer operational life of the memory cells being operated in two states when it is more desirable to have these advantages than the increased density of data storage that multi-state operation provides. An exemplary embodiment is as a memory card where the user can choice between two state and multi-state operation.
申请公布号 US7554842(B2) 申请公布日期 2009.06.30
申请号 US20040886302 申请日期 2004.07.06
申请人 SANDISK CORPORATION 发明人 BARZILAI RON;ELHAMIAS REUVEN
分类号 G11C16/04;G11C11/56;G11C16/12 主分类号 G11C16/04
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