Increasing dielectric constant in local regions for the formation of capacitors

摘要

A method for increasing capacitances of capacitors and the resulting integrated structure are provided. The method includes providing a substrate, forming a low-k dielectric layer over the substrate wherein the low-k dielectric layer includes a capacitor region and a non-capacitor region, forming a capacitor in the capacitor region, forming a masking layer which masks the non-capacitor region while leaving the capacitor region exposed, performing a local treatment to increase a k value of the low-k dielectric layer in the capacitor region, and removing the masking layer.