发明名称 |
Method(s) of forming a thin layer |
摘要 |
A method of forming a thin layer including providing a first single-crystalline silicon layer partially exposed through an opening in an insulation pattern and forming an epitaxial layer on the first single-crystalline silicon layer and forming an amorphous silicon layer on the insulation pattern, the amorphous silicon layer having a first portion adjacent the epitaxial layer and a second portion spaced apart from the first portion, wherein the amorphous silicon layer is formed on the insulation pattern at substantially the same rate at the first portion and at a second portion. The amorphous silicon layer may be formed to a uniform thickness without a thinning defect. |
申请公布号 |
US7553742(B2) |
申请公布日期 |
2009.06.30 |
申请号 |
US20060329158 |
申请日期 |
2006.01.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON YONG-HOON;SHIN YU-GYUN;LEE JONG-WOOK |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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