发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
An island-like interlayer insulating film is formed selectively in a region where a source interconnection and a gate interconnection intersect. For example, by use of ink jet method, a solution containing an insulating material is dropped on a region where the gate interconnection and the source interconnection intersect or a region where a holding capacitor is formed, that enable to reduce a photolithography process and to reduce the number of masks that are used in a TFT.
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申请公布号 |
US7554117(B2) |
申请公布日期 |
2009.06.30 |
申请号 |
US20040809118 |
申请日期 |
2004.03.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NAKAMURA OSAMU |
分类号 |
H01L29/04;H01L21/336;H01L21/768;H01L21/77;H01L27/12;H01L31/036 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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