发明名称 |
Thin film transistor, flat panel display having the same and a method of fabricating each |
摘要 |
A TFT having a dual buffer structure, a method of fabricating the same, and a flat panel display having the TFT, and a method of fabricating the same are provided. The TFT includes a first buffer layer formed of an amorphous silicon layer on a substrate, a second buffer layer formed on the first buffer layer. The TFT also includes a semiconductor layer formed on the second buffer layer and a gate electrode formed on the semiconductor layer. The dual buffer structure provides better barrier to impurities diffusing from the substrate, and also acts as a black matrix to reduce unwanted reflections and is a source of hydrogen to passivate other layers.
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申请公布号 |
US7554118(B2) |
申请公布日期 |
2009.06.30 |
申请号 |
US20050124124 |
申请日期 |
2005.05.09 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
KIM CHANG-SOO;KANG TAE-WOOK;JEONG CHANG-YONG;OH JAE-YOUNG;PARK SANG-IL;SEO SEONG-MOH |
分类号 |
G02F1/1368;H01L29/04;G02F1/136;G09F9/30;H01L21/00;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/10;H01L29/15;H01L29/745;H01L29/76;H01L29/786;H01L31/036;H01L31/0376;H01L31/20;H01L51/52 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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