CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要
A capacitor of a semiconductor device and a manufacturing method thereof are provided to secure the capacity of a capacitor and to form a supporting membrane between storage electrodes in order to prevent the leaning of the storage electrodes. A method for manufacturing a capacitor of a semiconductor device comprises the following steps of: forming a mold dielectric on a substrate(10); selectively etching the mold dielectric to form a storage electrode region; forming a material film on the whole surface of mold dielectric including the storage electrode region and completely reclaiming the material film up to predetermined height of the storage electrode region; separating the material film to form a storage electrode(20a); and removing the mold dielectric.
申请公布号
KR20090068776(A)
申请公布日期
2009.06.29
申请号
KR20070136531
申请日期
2007.12.24
申请人
HYNIX SEMICONDUCTOR INC.
发明人
LEE, KEE JEUNG;SONG, HAN SANG;KIL, DEOK SIN;KIM, YOUNG DAE;KIM, JIN HYOCK;DO, KWAN WOO;PARK, KYUNG WOONG