METHOD FOR MANUFACTURING TRANSISTOR IN SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a transistor of a semiconductor device is provided to minimize an etching degree of an isolation layer in an etch process for etching an active region and the isolation layer by reducing the height of the isolation layer in comparison with the height of the active region. An isolation layer(31) is formed on a semiconductor substrate in order to define an active region(30A). The surface height of the isolation layer is lower than the surface height of the active region. A hard mask layer and an anti-reflective layer are formed on the entire structure of the resultant. The hard mask layer and the anti-reflective layer are selectively etched by using the mask pattern for exposing a gate region. A first groove part is formed by etching the active region in the first depth. A second groove part is formed by etching the first isolation layer in the second depth. The second depth is larger than the first depth. A gate is formed on the first and second grooves.