| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to enable current flow between semiconductor devices by forming a lower portion of a trench larger than an upper portion of the trench. A trench(210) is formed at a semiconductor substrate and includes a bent or slowly bent side surface. An insulating layer is arranged at an inner side of the trench. A first side surface(211a) is extended from an upper surface of the semiconductor substrate and a second side surface is bent or slowly bent from the first side surface. A first trench is formed by selectively etching the semiconductor substrate. Agents for weakening binding force of the semiconductor substrate are implanted into the lower portion of the first trench. A second trench is formed by etching the lower portion of the first trench.
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