| 摘要 |
A metal line of an image sensor and a manufacturing method thereof are provided to improve optical characteristics of a photodiode and to improve a degree of integration and an operational speed by forming selectively a barrier layer only thereon and using a copper line with the metal line. A metal line of an image sensor includes a first interlayer dielectric(30), a conductive barrier layer, a second interlayer dielectric(60), a via trench, and a second metal line(70). The first interlayer dielectric includes a first metal line(40) arranged on a semiconductor substrate(10). The conductive barrier layer is arranged on the first metal line in order to expose selectively the first metal line. The second interlayer dielectric is arranged on the first interlayer dielectric including the conductive barrier layer. The via trench is formed on the second interlayer dielectric in order to expose the conductive barrier layer corresponding to the first metal line.
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