| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to reduce damage on a surface of a photodiode and to form uniformly the thickness of the photodiode by removing an unnecessary photodiode metal layer through an etch process. A CMOS image sensor includes a first insulating layer(104), a plurality of metal patterns(106), a second insulating layer(108), a via hole, a plurality of metal lines(112), a silicon oxide layer(114), a trench, a photo diode metal layer, and a photodiode(118a). The first insulating layer is formed on the substrate including a lower structure. The metal patterns are formed on the first insulating layer. The second insulating layer and the first insulating layer are formed on the metal lines. The via hole is formed to expose the metal lines through the second insulating layer. The via hole is formed in the metal line. The silicon oxide layer is formed on the second insulating layer and the metal lines. The trench is formed on the silicon oxide layer in order to prepare a photodiode region. The photodiode metal layer is formed on the trenches and the silicon oxide layer. The photodiode is formed by etching the photodiode metal layer, in order to expose the silicon oxide layer.
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