发明名称 METHOD FOR PREPARING V2O5 NANOWIRE FILM HAVING IMPROVED ALIGNMENT AND THE V2O5 NANOWIRE FILM PREPARED THEREFROM
摘要 A method for manufacturing a divanadium pentaoxide nano wire thin film with improved alignment is provided to conveniently cut manufactured nano wires in order to secure reproducibility and characteristic of devices. A method for manufacturing a divanadium pentaoxide nano wire thin film comprises the following steps of: preparing a divanadium pentaoxide nano wire(V2O5 nano-wire) solution; diluting the solution in water and inputting the diluted solution into the Langmuir-Blodgett trough; adding a dispersing agent to the diluted solution; diluting a halogenated dioctadecyl dimethylammonium solution in an organic solvent and coating the diluted halogenated dioctadecyl dimethylammonium solution on the surface of the diluted solution prepared in previous step; adjusting the interface pressure of the halogenated dioctadecyl dimethylammonium solution by using a barrier in the Langmuir-Blodgett trough; fixing a substrate on a dipping rod of the Langmuir-Blodgett trough and contacting the substrate with the interface of the halogenated dioctadecyl dimethylammonium solution; and separating the substrate from the dipping rod.
申请公布号 KR20090069082(A) 申请公布日期 2009.06.29
申请号 KR20070136928 申请日期 2007.12.24
申请人 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION 发明人 PARK, JAE HYUN;HA, JEONG SOOK;KIM, YONG KWAN
分类号 B82B3/00 主分类号 B82B3/00
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