| 摘要 |
An apparatus and a method for depositing thin films are provided to prevent remaining source gas from being mixed with reaction gas to reduce the amount of impurities such as particles, thereby improving the quality of the thin film. An apparatus for depositing thin films comprises a reaction chamber(110), a susceptor(120), a gas supply unit(130), a separation exhausting unit and a vacuum pump unit. The susceptor is rotatably mounted in the reaction chamber. At least one substrate is settled in the susceptor. The gas supply unit is mounted on the top of the reaction chamber. The gas supply unit independently supplies various kinds of gas into the reaction chamber. The separation exhausting unit is mounted on the top of the susceptor to partition regions. The separation exhausting unit includes an exhaust line to exhaust neighboring gas.
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