| 摘要 |
A method for manufacturing an image sensor is provided to block impurity ions of high temperature which attacks to oxide film around a gate silicon by forming amorphous carbon film on the gate silicon. A method for manufacturing an image sensor comprises: a step of sequentially depositing a gate oxide film(220), gate silicon(230') and carbon film(240') on a silicon substrate(210); a step of forming a first photo sensitive film pattern(250) on the carbon film.; a step of etching the carbon film and gate silicon selectively; a step of forming a second photo sensitive film pattern(260) on the silicon substrate.
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