| 摘要 |
A method for modeling a MOS transistor is provided to generate random number using less number of Monte Carlo simulation processes than conventional Monte Car simulation processes in order to verify various worst-cases and best-cases. A method for modeling a MOS transistor comprises the following steps of: setting a relational expression and a variable which determine the driving current properties of the MOS transistor; generating random number; changing the random number to satisfy the vertex of a rotated diamond-shaped equation and determining the variation of the variable through the changed value; and outputting the driving current distribution of the MOS transistor by using the relational expression and variable.
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