| 摘要 |
An image sensor and a manufacturing method thereof are provided to form an insulating layer of a pixel array unit thinner than the insulating layer of a logic pad unit to minimize the step height between the pixel array unit and the logic pad unit, thereby improving the sensitivity of a micro-lens. An image sensor comprises a semiconductor substrate(100), a pixel array unit, a color filter array(400), a planarization layer(500), a micro-lens(600) and an insulating layer(800). The pixel array unit includes a plurality of photo diodes. The semiconductor substrate has a logic pad unit on which a plurality of transistors are formed to operate the photo diodes. The color filter array is formed on the pixel array unit of the semiconductor substrate. The planarization layer is formed on the color filter array. The micro-lens is formed on the planarization layer. The insulating layer is formed between the color filter array and the semiconductor substrate.
|
