| 摘要 |
A method for manufacturing a MIM structure capacitor is provided to prevent remaining of titanium/titanium nitride(Ti/TiN) on the side wall of MIM capacitor and improve the property of MIM structure capacitor. A method for manufacturing MIM structure capacitor comprises: a step of depositing nitride filme(220) and titanium/titanium nitride(Ti/TiN ; 211, 217, 213, 219, 232, 234) of upper electrode metal layer on a lower part electrode metal layer(210); a step of applying a photo resist on the upper electrode metal layer and feathering the photo resist layer; a step of selectively etching the titanium/titanium nitride(Ti/TiN); and a step of removing remaining nitride film.
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