METHOD OF FABRICATING SCHOTTKY BARRIER TRANSISTOR

摘要

A method for manufacturing a schottky barrier transistor is provided to improve a scaling-down effect due to an alignment error by performing a mask process twice in a perpendicular direction. A pair of cavities and a channel forming part are formed on a substrate(200). The cavities are used for forming a source forming part and a drain forming part. A channel forming part having a shape of fin is formed between the cavities. The cavities are filled with a metal. A channel(210), a source(221), and a drain are formed by patterning the channel forming part, the source forming part, and the drain forming part in a perpendicular direction to the longitudinal direction of the channel forming part. A gate oxide layer for covering the source, the drain, and the channel forming part and a gate metal layer are sequentially formed on the substrate. A gate electrode is formed on the channel layer by patterning the gate metal layer. A schottky barrier is formed by processing thermally the substrate.