| 摘要 |
An image sensor is provided to improve the light efficiency input in a photo diode and protect light input from other pixel. An image sensor comprises a semiconductor substrate(100), photo diode(200), wiring layers(410, 420, 430, 440), dummy pattern(500), and micro lens(600). The semiconductor substrate is defined with a sensing area(SR) and driving area(DR). The photo diode is formed in the sensing area. The wiring layer is formed on the semiconductor substrate. The dummy pattern is formed on the wiring layers. The dummy pattern comprises opening area(OA) corresponding to the photo diode. The micro lens is arranged on the dummy pattern.
|
