| 摘要 |
<p>A method for manufacturing semiconductor device is provided to confirm hot spot defects of the specific exposure condition to converge the exposure problem of the specific exposure condition. A formation method of a semiconductor device comprises a design phase(S1) of layout, an application phase(S2) of an optical proximity correction, a verification step(S3) of deformity, and a manufacturing process(S4) of the exposure mask. A layout design phase is performed to design a layout for implementing an intended circuit. An application phase of an optical proximity correction is performed to transform a shape of patterns of the exposure mask through the preparation of the rule file and check of the design rule. The deformation of the shape of the pattern of the exposure mask is performed to correspond to the intended pattern shapes in exposed final patterns. The verification step of deformity is performed to consider deformities generated in the selected process window in the remaining window. The manufacturing process of the exposure mask is performed through the application phase of the optical proximity correction and the verification step of deformity to make the exposure mask corresponding to layout.</p> |
