| 摘要 |
A method for manufacturing a semiconductor device is provided to obtain a gate electrode having relatively low resistance by forming silicides uniformly. An insulating film(210a) is formed on a semiconductor substrate(100). A sacrifice pattern(220) is formed on the insulating film and a trench for exposing a portion of the insulating film is formed at the sacrifice pattern. A first gate forming material layer is formed at inside of the trench. A second gate forming material layer is formed at inside of the first gate forming material layer. A gate electrode is formed by allowing reaction between the first gate forming material layer and the second gate forming material layer. |
