| 摘要 |
<p>A manufacturing method of semiconductor device is provided to enhance the process margin of the etching process by inserting tab-pattern to the layout which has resistance to leaning phenomenon and having big length in comparison with the minimum line length. The manufacturing method of semiconductor device comprises a design phase(S1) of a first lay out, a comparison step(S2) of a minimum line length, and a correction step(S3) of the first lay out. A design phase of the first layout is performed to design the first layout implementing the intended circuit. A comparison step of the minimal line length is performed to apply DRC to the first layout and compares the length of the first layout and the minimum dimension which does not tumble down of the line. The manufacturing method of semiconductor device comprises an application phase(S4) of the optical proximity correction, a manufacturing process(S5) of mask, and an execution phase(S6) of the wafer process. The application phase of the optical proximity correction is performed to apply the optical proximity correction to the first layout and forms the second layout. The manufacturing process of mask is performed to make the mask corresponding to the second layout.</p> |
