| 摘要 |
<p>A method for forming a metal line of a semiconductor device is provided to simplify a manufacturing process by forming residual metal lines using a metal layer. A metal layer is deposited on a semiconductor substrate(200) on which an interlayer dielectric(204) is deposited on a patterned lower metal line. A first photoresist pattern is formed to define a contact region on the deposited metal layer. The metal layer and the interlayer dielectric are etched to expose the lower metal line according to the first photoresist pattern and to form a contact hole. The first photoresist pattern is removed. The contact hole is buried with a metal material. A contact plug(212) including a part of an upper metal line by planarizing the metal material. A second photoresist pattern is formed to define a wiring region on the contact plug. The residual metal line is formed by etching metal layer along the second photoresist pattern.</p> |
