| 摘要 |
A fuse of a semiconductor device and a forming method thereof are provided to increase a net die by reducing a pitch of a fuse and a size of a chip. A first interlayer insulating film(200) is formed on a semiconductor substrate. A fuse(210) is formed on the first interlayer insulating film. The fuse is made of one selected among poly-silicon, aluminum, copper, tungsten and the mixture thereof. A hole is formed by etching a part of a fuse blowing region of the fuse. A metal alloy material(230) is formed on the whole fuse including the hole. The fuse is exposed by a CMP(Chemical Mechanical Polishing) process. The hole is filled with the metal alloy material. A melting point of the metal alloy material is lower than the melting point of the fuse.
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