| 摘要 |
<p>A manufacturing method of a semiconductor device is provided to protect a gate insulating layer formed in an inside of a trench by using a first etched gate material layer in a first etch process for etching an insulating layer. An insulating layer(200) is formed on a semiconductor substrate(100). A trench is formed through a part of the semiconductor substrate. A gate material layer(310) is formed on the insulating layer and the inside of the trench. A first gate material layer etch process is performed to etch the gate material layer. A first insulating layer etch process is performed to etch an insulating layer. A second gate material layer etch process is performed to etch the first etched gate material layer in order to form a gate electrode in the inside of the trench. A second insulating layer etch process is performed to etch the first etched insulating layer.</p> |
