METHOD FOR FORMING VERTICAL CHANNEL TRANSISTER IN SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a vertical channel transistor of a semiconductor device is provided to prevent the attack of a mask pattern and a semiconductor pillar by using a high-dielectric constant layer instead of a conventional nitride layer. A method for manufacturing a vertical channel transistor of a semiconductor device comprises the following steps of: forming a mask pattern on a semiconductor substrate(30) to form a semiconductor pillar; etching the mask pattern(31) in predetermined depth by using an etching barrier in order to form the top of the semiconductor pillar; forming a first spacer(32) consisting of a high-dielectric constant layer on the top and side wall of the semiconductor pillar and the mask pattern; and etching the mask pattern and the first spacer in the predetermined depth by using the etching barrier so as to form the bottom of the semiconductor pillar.