| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to improve deterioration of CD(Critical Dimension) uniformity by forming a pattern for enhancing resolution and focal depth. A BARC(Bottom Anti-Reflective Coating) layer(103) and a photoresist layer(105) are sequentially formed on an upper surface of a semiconductor substrate(101) by performing a soft bake process. A thermal resin is formed on an upper surface of the photoresist layer. An exposure process for the thermal resin is performed by using a photomask. A developing process is performed to form a pattern. The thermal resin has a refractive index larger than the refractive index of the air. The refractive index of the thermal resin is smaller than the refractive index of the photoresist.</p> |
