| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent distortion and damage of a photoresist pattern by etching an organic BARC(Bottom Anti-Reflective Coating) with the gas including sulfur. An organic BARC is formed on a layer(11) to be etched. The layer to be etched is the insulating layer or conductive layer. A photoresist pattern(13) is formed on an organic BARC. The organic BARC is etched by using the gas including sulfur. The gas including sulfur is COS. The organic BARC is etched by an inductively coupled plasma under the pressure of 1 mTorr to 100 mTorr at the temperature of 0 to 100 degrees centigrade.</p> |
