METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor element is provided to prevent leakage current by removing impurities such as minute oxide film. A method for manufacturing a semiconductor element comprises: a forming a gate pattern on a substrate; a step of forming a insulation film on a whole structure containing the gate pattern; a step of opening both sides of gate pattern; a step of performing pre-treatment including treatment, washing and hydrogen bake; and a step of forming epitaxial layer on the exposed substrate.