| 摘要 |
<p>A method for forming a gate of a flash memory device is provided to enhance reliability by preventing generation of electron traps in a programming process and an eliminating process. A floating gate(104), an insulating layer(106), and a gate electrode of a control gate structure(108) are formed on a semiconductor substrate(100). A FSG(Fluorine Silicate Glass) layer(110) is formed on a front surface of the semiconductor substrate including the gate electrode. A sidewall oxide layer(112) is formed on a lateral surface of the gate electrode through a thermal process for the semiconductor substrate. The thermal process for the semiconductor substrate is performed to diffuse fluorine components of the FSG layer to a silicon interface of the lateral surface of the gate electrode. A nitride layer is deposited on the front surface of the semiconductor substrate. A spacer is formed on a sidewall of the gate electrode by depositing and etching a nitride layer on the front surface of the semiconductor substrate.</p> |
